多晶硅薄膜晶体管中的晶粒间界电荷分享效应  

Charge Sharing Effects of Grain Boundary in Polysilicon TFTs

作　　者：欧秀平[1] 姚若河[1] 吴为敬[1] 

机构地区：[1]华南理工大学电子与信息学院,广州510640

出　　处：《微电子学》2008年第6期796-799,816,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60776020)

摘　　要：通过对晶粒间界两侧耗尽区建立准二维模型,研究晶粒间界电荷分享效应对多晶硅薄膜晶体管阈值电压的影响。研究表明,考虑了晶粒间界电荷分享效应的阈值电压将变小,其中晶粒尺寸对阈值电压的影响最大。在此基础上,建立了多晶硅薄膜晶体管的阈值电压解析模型。Influence of grain boundary＇s charge sharing effect on threshold voltage in polysilicon thin-film transistors （TFT） was investigated via a quasi-two-dimensional model in the depletion region on both sides of the grain boundary. It has been demonstrated that the threshold voltage would decrease when charge sharing effect was taken into consideration, and that the grain size had the greatest influence on threshold voltage. Finally, an analytical model of threshold voltage for polysilicon TFTs was established based on the study.

关 键 词：多晶硅 薄膜晶体管 晶粒间界 电荷分享效应 

分 类 号：TN321.5[电子电信—物理电子学]