PD SOI MOSFET低频噪声研究进展  

An Overview of Low-Frequency Noise in PD SOI MOSFET

作　　者：范雪梅[1] 毕津顺[1] 刘梦新[1] 杜寰[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2008年第6期817-822,共6页Microelectronics

基　　金：国家自然科学基金资助项目(60576051)

摘　　要：随着器件尺寸的不断减小,PD SOI器件的低频噪声特性对电路稳定性的影响越来越大。研究了PD SOI器件低频过冲噪声现象,分析了此类器件在发生浮体效应、栅致浮体效应以及前背栅耦合效应时低频过冲噪声的产生机理及影响因素。最后指出,可以通过添加体接触或将PD SOI器件改进为双栅结构,达到有效抑制低频过冲噪声的目的。As the feature size of the device is scaling down, the low-frequency noise in PD SOI （Partial Depleted Silicon-On-Insulator） device becomes more and more important to stability of the circuit. The phenomena of low frequency overshoot were discussed. The generation mechanism and influence factors of low frequency noise when floating body effect, gate induced floating body effect and front-back gate coupling effect took place in PD SOI devices were investigated. Finally, it is suggested that the low frequency noise in PD SOI device can be effectively suppressed by adding body contact or using twin-gate structure.

关 键 词：PD SOI MOSFET 低频噪声 浮体效应 前背栅耦合效应 

分 类 号：TN386.1[电子电信—物理电子学]