Ka波段Si基微机械宽带垂直过渡  

Ka-Band Wideband Vertical Transition Using Silicon Micromachined Processing

作　　者：戴新峰[1] 郁元卫[1] 贾世星[2] 朱健[1] 於晓峰[3] 丁玉宁[3] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家级重点实验室,南京210016 [2]南京电子器件研究所微纳米研发中心,南京210016 [3]南京电子器件研究所毫米波电路部,南京210016

出　　处：《微纳电子技术》2008年第12期712-715,共4页Micronanoelectronic Technology

摘　　要：介绍了一种适用于三维毫米波集成电路的Si基微机械垂直过渡,该垂直过渡是两层0.1mm厚的共面波导传输线通过0.3mm厚中间层,在中间层采用了同轴结构,该同轴结构通过金属化通孔来实现。这一设计原理简单,结构简洁,便于优化设计,具有很宽的带宽和平坦的幅度响应。运用三维电磁场仿真软件对该垂直过渡结构进行了建模,并作了优化设计与仿真计算,运用微机械金属化通孔工艺和多层键合工艺研制了样品。在片测试结果表明该样品性能良好,在26.5～34.0GHz该过渡插入损耗小于3.5dB,带内起伏小于2dB。A silicon micromachined vertical transition was presented, which can be used for 3-dimentional （3D） millimeterwave integrated circuits. This transition was between two coplanar waveguides （CPWs） with 0. 1 mm thickness individually through a interlayer of 0.3 mm thickness. A coaxial architecture was chosen in the interlayer, which is easy to be opertimized and simple in operating principle and structure, and results in a wideband characteristic and flat amplitude responses. The coaxial structure was realized by using metallic via holes. The vertical transition was modeled, simulated and optimized by 3D electro-magnetic field simulation software, and then fabricated by silicon micromachined processing. The on-wafer measured results of the prototypes show that an insertion loss is less than 3, 5 dB at 26.5 - 34. 0 GHz, along with an amplitude variation of less than 2 dB.

关 键 词：KA波段 Si基微机械 三维集成电路 宽带垂直过渡 热压键合 

分 类 号：TN304.12[电子电信—物理电子学] TH702[机械工程—仪器科学与技术]