InGaN/GaN多量子阱的变温发光特性研究  

Temperature Dependent Optical Characteristics of InGaN/GaN Multiple Quantum Well

作　　者：孔令民[1] 李鼎[1] 张野芳[2] 宿刚[1] 薛江蓉[1] 姚建明[1] 吴正云[3] 

机构地区：[1]浙江海洋学院物理系,浙江舟山316000 [2]浙江海洋学院数学系,浙江舟山316000 [3]厦门大学物理系,福建厦门361005

出　　处：《半导体光电》2008年第6期909-912,共4页Semiconductor Optoelectronics

基　　金：浙江省舟山市科技项目(06110);浙江海洋学院科研项目(X06LY01);浙江海洋学院中青年教师资助项目(11064100107)

摘　　要：采用低压金属有机化学沉积方法制备了InGaN/GaN多量子阱。变温PL测量发现,量子阱发光强度具有良好的温度稳定性,随着温度升高(10～300K),发光强度只减小到1/3左右。分析认为,InGaN/GaN多量子阱的多峰发光结构是由多量子阱的组分及阱宽的不均匀引起的。随着温度升高,GaN带边及量子阱的光致发光均向低能方向移动,但与GaN带边不同,量子阱发光峰值变化并不与通过内插法得到的Varshni经验公式相吻合,而是与InN带边红移趋势一致,分析了导致这种现象的可能因素。还分析了量子阱发光寿命随温度升高而减小的原因。The properties of temperature dependent photoluminescence （TDPL）of InGaN/ GaN multiple quantum well （MQW） grown by metal-organic chemical vapor deposition （MOCVD） were experimentally investigated. TDPL measurements show that the PL intensity of MQW is very steady, which decays only to 1/3 as the temperature increases from 10 K to 300 K. It is considered that the multiple PL peaks are caused by inhomogeneous component and well width of MQW. The emission wavelength of both GaN band gap and InGaN/GaN MQW expresses an obvious red-shift. However, different from that of GaN band, the red-shift of the MQW does not accord with the Varshni empirical equation obtained by the linear interpolation method, while it has the same trend with that of InN bandl The possible reason for causing the abnormality has been discussed. The PL lifetime decrease of the MQW with the increase of temperature was also analyzed.

关 键 词：INGAN/GAN多量子阱 光致发光 时间分辨谱 

分 类 号：O472.3[理学—半导体物理]