工作气压对磁控溅射法制备硼碳氮薄膜结晶度的影响(英文)  

Effect of Total Pressure on Crystallinity of Boron Carbon Nitride Thin Films Deposited by RF Magnetron Sputtering

作　　者：龚恩乐[1] 刘镒[1] 方之颢[1] 于杰[1] 

机构地区：[1]哈尔滨工业大学深圳研究生院材料科学与工程学科部,西丽518055

出　　处：《世界科技研究与发展》2008年第6期694-696,共3页World Sci-Tech R&D

摘　　要：本文用六方氮化硼和石墨靶材采用射频(频率为13.56 MHz)磁控溅射法沉积硼碳氮薄膜,得到的硼碳氮薄膜可用红外,拉曼表征。工作气压从0.2 Pa升高到6.0 Pa。我们可以观察到工作气压可以明显的改变硼碳氮薄膜的晶体结构和结晶度。硼碳氮薄膜的半高宽随工作气压的增加而变化并且在工作气压1.0 Pa时得到较好结晶度的薄膜。Boron carbon nitride （BCN） thin films were deposited on silicon substrates by radio frequency（ 13.56 MHz） magnetron sputtering from hexagonal boron nitride （h-BN） and graphite targets. Deposited BCN thin films were characterized by Fourier transform infrared spectroscopy （ FTIR）, Raman spectroscopy （RS）. The growth total pressure ranged from 0. 2 to 6. 0 Pa. The deposition total pressure was observed to have significant effect on the composition and crystallinity of BCN films. Full width at half maximum （FWHM） of BCN thin films changed with the total pressure increase and better erystallinity was observed for thin films prepared at 1.0 Pa.

关 键 词：硼碳氮薄膜 射频磁控溅射 工作气压 结晶度 半高宽 

分 类 号：TB383.2[一般工业技术—材料科学与工程]