Φ200mm硅单晶的生长工艺特点  

Growth Characteristics of Φ 200 mm Silicon Single Crystal

作　　者：张果虎[1] 常青[1] 方锋[1] 吴志强[1] 周旗钢[1] 

机构地区：[1]北京有色金属研究总院

出　　处：《稀有金属》1998年第1期67-68,共2页Chinese Journal of Rare Metals

摘　　要：在全自动拉晶条件下，讨论了拉制Φ２００ｍｍ硅单晶遇到的新问题。热场配置、工艺参数的选择、石英坩埚的选用等有了更严格的要求。合理的轴向温度梯度和径向温度梯度、低拉速、低晶转及规范的拉晶工艺是拉制大直径单晶的关键。Problems of large diameter single crystal growth using sophisticated equipment were discussed. Man made interference was reduced since the automatic crystal growth equipment was applicated, but the hot zone design, process paramter selection and the high quality of quartz crucible become more important. It indicates that appropriate temperature gradient (both axial and radial), lower pulling rate and lower seed rotation rate are cruxes of Φ 200 mm silicon single crystal growth.

关 键 词：硅单晶 无位错 热场 拉晶 半导体 

分 类 号：TN304.12[电子电信—物理电子学]