氟化非晶碳膜的微结构分析  

Growth and Properties of Fluorinated Amorphous Carbon Films

作　　者：蒋爱华[1] 肖剑荣[1] 

机构地区：[1]桂林工学院数理系,桂林541004

出　　处：《真空科学与技术学报》2009年第1期38-41,共4页Chinese Journal of Vacuum Science and Technology

基　　金：广西教育厅科研项目(No.200807MS044);桂林工学院博士启动项目(No.002401003252)

摘　　要：利用等离子体增强化学气相沉积(PECVD)法,在不同的温度下制备了氟化非晶碳膜。采用原子力显微镜(AFM)、X射线光电子能谱(XPS)和傅里叶红外吸收光谱(FTIR)等仪器对薄膜微结构进行了表征。研究发现,氟化非晶碳膜微观结构与薄膜生长过程温度控制密切相关,温度升高,膜内键合结构变化,sp2相对含量增加。The fluorinated amorphous carbon （a-C ： F） thin films were grown by RF plasma enhanced chemical vapor deposition （RF-PECVD）. The a-C：F thin films were characterized with atomic force microscopy （AFM）, X-ray photoelectron spectroscopy （XPS） and Fourier transform infrared spectroscopy （PTIR）. The influence of the film growth conditions on micmstructures and properties of the a-C ： F films was studied. The results show that the substrate temperature strongly affects the micmstmetures of a-C：F films. As the substrate temperature increases, the structures of chemical bond changes and the relative density of sp^2 in the film increases.

关 键 词：氟化非晶碳薄膜 PECVD 微结构 沉积温度 

分 类 号：TN304[电子电信—物理电子学]