GaAs MESFET旁栅迟滞特性的机理分析  

Mechanism analysis of sidegating effect hysteresis in GaAs MESFETs

作　　者：毛剑波[1] 易茂祥[1] 丁勇[1] 

机构地区：[1]合肥工业大学应用物理系,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2009年第1期124-127,共4页Journal of Hefei University of Technology：Natural Science

摘　　要：探讨了GaAs MESFET旁栅效应迟滞特性的产生机理,通过详细地分析论证,认为GaAs MESFET旁栅效应迟滞特性与器件的沟道-衬底界面区的电子特性以及半绝缘GaAs衬底具有高密度的深能级电子陷阱有关。通过分析得出的结论可以很好地说明实验结果,同时对于分析GaAs器件的其他特性也具有一定的参考意义。The mechanism of sidegating effect hysteresis in GaAs MESFETs is analyzed in this paper. The analysis shows that the sidegating effect hysteresis in GaAs MESFETs is associated with both electronic properties of the channel-substrate interface region and deep level electron traps in semi-insulating GaAs substrates. The analysis result can well explain the experimental results. In addition, the analysis result is useful for understanding other properties of GaAs devices.

关 键 词：GAAS MESFET 旁栅效应 迟滞特性 沟道衬底结 电子陷阱 

分 类 号：TN304.23[电子电信—物理电子学]