氧等离子体刻蚀CVD金刚石膜  

Etching of CVD diamond films by oxygen plasmas

作　　者：吴振辉[1] 马志斌[1] 谭必松[1] 郑先锋[1] 汪建华[1] 

机构地区：[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,湖北武汉430074

出　　处：《武汉工程大学学报》2009年第1期65-68,共4页Journal of Wuhan Institute of Technology

基　　金：国家自然科学基金(10875093)

摘　　要：分别采用直流辉光、微波和电子回旋共振3种氧等离子体对CVD金刚石膜表面进行了刻蚀.利用扫描电子显微镜对三种等离子体刻蚀后金刚石膜表面的形貌进行了观察分析.通过对刻蚀后形貌差异的比较,探讨了它们各自的刻蚀机理,并从等离子体鞘层理论出发建立了刻蚀模型.Etchings of CVD diamond films using oxygen plasmas produced by DC glow discharge, microwave discharge and electron cyclotron resonance（ECR）discharge are investigated. The surface morphologies of the diamond films before and after etching by three kinds of plasmas are analyzed using scanning electron microscopy. The etching mechanisms of etching are discussed respectively through comparing the differences of the morphology of the etched diamond films. Finally, etching models are developed according to the theories of plasma sheath.

关 键 词：氧等离子体 CVD金刚石膜 刻蚀机理 

分 类 号：TQ164[化学工程—高温制品工业]