无烧结助剂SiC陶瓷的高压烧结研究  

ULTRA-HIGH PRESSURE SINTER NANO-SiC CERAMIC

作　　者：谢茂林[1] 罗德礼[1] 鲜晓斌[1] 冷邦义[1] 陈伟[1] 鲁伟员[2] 范辉[1] 

机构地区：[1]中国工程物理研究院,绵阳621900 [2]四川艺精超硬材料有限公司,江油621700

出　　处：《中国陶瓷》2009年第1期19-22,共4页China Ceramics

摘　　要：以纳米SiC为原料,用两面顶压机在不同工艺条件下(1100-1300℃,4.0-4.5GPa,20-35min)实现了无烧结助剂添加的SiC陶瓷体的烧结。研究了烧结工艺对SiC陶瓷性能的影响。用XRD、SEM、显微硬度测试仪等对SiC高压烧结体进行了表征。结果表明:采用超高压工艺可实现无烧结助剂SiC陶瓷高致密化烧结;烧结体晶粒长大得到抑制,维持在纳米级,晶格常数收缩发生了收缩;烧结体显微硬度和密度随烧结温度、烧结压力、保温时间的升高或延长而提高。在4.5GPa/1250℃/35min的超高压烧结条件下烧结的无烧结助剂SiC致密度达到96%,且显微硬度达到Hv1.963850。High density SiC ceramics were fabricated with pure SiC nano powder under different technic condition （1100℃-1300℃, 4. 0-4. 5GPa, 20-35min） in China-type twain face anvils apparatus. The effect of sinter technic on the mechnical characteristics of SiC ceramics were studied. The sintered SiC were characterized by XRD. SEM, EDS and Micro-hardness tester. The results indicate that pure SiC can be sintered to high density by ultra-high pressure technique. The grain growth has been controlled, stay as nano grains, and crystal lattice shrinks. The micro-hardness and density increase with the increasing sinter temperature, pressure and time. The density of SiC sintered at the condition of 4.5GPa/1250℃ /35min by ultra-high pressure technic can reach 96% of its theory density and its micro-hardness is HV1.96 3850.

关 键 词：碳化硅 烧结 超高压 

分 类 号：TQ174.653.8[化学工程—陶瓷工业]