一个证明SI-GaAs中EL2缺陷为双施主中心的方法  

A Method to Prove El2 defect in SIGaAs Double Doner Center

作　　者：周滨[1,2] 杨锡权[1,2] 王占国 

机构地区：[1]中科院半导体研究所半导体材料科学实验室 [2]广西师范大学

出　　处：《稀有金属》1998年第2期116-119,共4页Chinese Journal of Rare Metals

摘　　要：利用ＳＩＧａＡｓ中ＥＬ２缺陷在低温下特有的光淬灭行为，提出了一个证明ＥＬ２缺陷是一个具有多个不同荷电状态的双施主中心的实验方法。讨论了该方法用于测量ＳＩＧａＡｓ材料电学补偿度，进而对材料的热学稳定性进行评价的可能性。By using the famous photoquenching behaviour of EL2 defect in SIGaAs at low temperature, a photocurrent technique was proposed to evidence that the EL2 defect is a double donor center with different charge states. The possibilities of using the photocurrent technique to determine the electrical compensation ratio and further to evaluate the thermal stability of SIGaAs material were discussed in detail.

关 键 词：SI-GAAS EL2 光淬灭 补偿度 

分 类 号：TN304.23[电子电信—物理电子学]