GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长  

Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots

作　　者：蒋中伟[1] 王文新 高汉超[1] 李辉[1] 何涛[1] 杨成良[1] 陈弘[1] 周均铭[1] 

机构地区：[1]北京凝聚态物理国家实验室,中国科学院物理研究所,北京100190

出　　处：《物理学报》2009年第1期471-476,共6页Acta Physica Sinica

摘　　要：研究了GaSb/GaAs复合应力缓冲层上自组装生长的InAs量子点.在2MLGaSb/1MLGaAs复合应力缓冲层上获得了高密度的、沿[100]方向择优分布量子点.随着复合应力缓冲层中GaAs层厚度的不同,量子点的密度可以在1.2×1010cm-2和8×1010cm-2进行调控.适当增加GaAs层的厚度至5ML,量子点的发光波长红移了约25nm,室温下PL光谱波长接近1300nm.Optical properties and surface structures of InAs/GaAs serf-assembled QDs grown on 2ML GaSb and x-ML GaAs combined strain-buffer layer are investigated systematically by photoluminescence（PL） and atomic force microscopy（AFM）.The QD density varies from 1.2×10cm -2 to 8.0×10cm -2 due to the influence of the lattice mismatch.The combined layer favors the increasing of In incorporated into dots and the average height-to-width ratio,which resulted in the red-shift of the emission peaks.For the sample of 5ML GaAs thin film the ground state transition is shifted to nearly 1300nm at room temperature.

关 键 词：自组装量子点 分子束外延 Ⅲ-Ⅴ族化合物半导体 

分 类 号：O471.1[理学—半导体物理]