InGaAs/GaAs应变单量子阱的表面光伏谱  

Surface Photovoltaic Spectra of Strained InGaAs/GaAs Single Quantum Well

作　　者：余辛[1] 吴正云[1] 黄启圣[1] 

机构地区：[1]厦门大学物理学系

出　　处：《厦门大学学报（自然科学版）》1998年第2期182-186,共5页Journal of Xiamen University：Natural Science

基　　金：国家和福建省自然科学基金

摘　　要：采用表面光伏谱方法，测量了应变ＩｎＧａＡｓ／ＧａＡｓ单量子阱在不同温度下光伏效应．结合理论计算对样品表面光伏谱的谱峰进行了指认，分析了量子阱内子能级间的跃迁能量。Surface photovoltaic (SPV) spectral method has been used to measure the photovoltaic effect of the strained InGaAs/GaAs single quantum well at different temperatures. Compared with the theoretical calculation, the transition peaks of the SPV spectra were identified. The relation between the temperature and the sub band transition energy, transition intensity and the half width of the transition peak of the quantum well was discussed.

关 键 词：光伏谱 应变量子阱 砷化镓 INGAAS 

分 类 号：O471.1[理学—半导体物理] TN304.23[理学—物理]