电子束曝光中低能电子散射的模拟  

Simulation of Low-Energy Electron Scattering in Electron Beam Exposure

作　　者：罗晓斌[1] 于肇贤[1] 

机构地区：[1]北京信息科技大学理学院,北京100101

出　　处：《微纳电子技术》2009年第1期55-59,共5页Micronanoelectronic Technology

基　　金：北京市自然科学基金资助项目(1072010)

摘　　要：介绍了Pendry弹性散射截面,描述了电子在固体中的散射过程,包括散射步长、散射角、方位角和散射点处能量的确定,并将Pendry截面和Monte Carlo计算方法应用到电子散射过程中。分别改变入射电子束能量、抗蚀剂厚度和衬底材料,模拟了能量不超过5keV的低能电子束在PMMA抗蚀剂中的散射轨迹。模拟结果表明,低能电子束曝光同样可应用于较高分辨率的表面成像技术工艺。通过对模拟结果和电子束曝光实验比较分析,可以进一步完善散射模型,为更深入开展电子束曝光技术的应用研究创造有利条件,同时也为开发低成本的低能电子束曝光系统提供了理论依据。Pendry elastic scattering cross section was introduced. The scattering process of elec trons in solids was described, such as the determination of scattering step size, scattering angle, azimuth angle and energy at scattering points. Furthermore, Pendry cross section and Monte Carlo calculation method were applied to the electron scattering process. The scattering track of the low-energy electron beam under 5 keV in PMMA resists was simulated by changing incident energy of electron beam, thickness of resists and substrate materials, respectively. The simulation results show that the low-energy electron beam lithography can be used in surface imaging technology with high resolution. Comparison of the simulation results and the experiments of the electron beam lithography shows that the cattering model can be improved, the favourable conditions can be created to deeply develop the application research on electron beam lithography technique, and the theoretical basis is provided for exploring the low-cost system of low-energy electron beam lithography.

关 键 词：电子束光刻 Pendry截面 低能电子束 散射轨迹 分辨率 

分 类 号：TN305.7[电子电信—物理电子学]