部分耗尽SOI NMOSFET总剂量辐照的最坏偏置(英文)  

The Worst Case Bias for the Total Dose Irradiation of PD SOI NMOSFET

作　　者：卜建辉[1] 刘梦新[1] 胡爱斌[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2009年第1期65-68,共4页Semiconductor Technology

摘　　要：通过模拟对ON、OFF、TG三种偏置下PD SOI NMOSFET的总剂量辐照效应进行了研究。模拟发现正沟道的最坏偏置是ON偏置,背沟道的最坏偏置与总剂量有关。当总剂量大时,背沟道的最坏偏置是OFF偏置;当总剂量小时则是TG偏置。而NMOSFET的最坏偏置则取决于起主要作用的是正栅还是背栅。由于辐照产生电子空穴对的过程与电场分布强相关,通过分析不同偏置下电场分布的差异确定最坏偏置的内在机制。By using ISE, PD SOI NMOSFET was irradiated with different bias configurations to explore which bias configuration is the worst-case bias. The simulation results indicate that theworst case bias for the front channel is the ON bias configuration, and that for the back channel is related to the total dose. If the total dose is higher, the worst case bias is the OFF bias configuration, or the worst case bias is the TG bias configuration when the total dose is lower. The worst case bias for the NMOSFET depends on whether the front gate oxide or the buried oxide dominates the response. The mechanism to decide the worst case bias is proposed by analyzing the distribution of the electric field for that the generation of electron-hole pairs due to radiation is an electric field-dependent process.

关 键 词：绝缘体上硅 总剂量效应 最坏偏置 部分耗尽 辐照 

分 类 号：TN386[电子电信—物理电子学]