在柔性衬底上制备透明导电薄膜ZnO:Zr(英文)  

Transparent Conducting ZnO:Zr Films Deposited on Flexible Substrates

作　　者：张化福[1] 类成新[1] 刘汉法[1] 袁玉珍[1] 袁长坤[1] 

机构地区：[1]山东理工大学物理与光电信息技术学院,山东淄博255049

出　　处：《半导体技术》2009年第2期153-157,共5页Semiconductor Technology

摘　　要：采用射频磁控溅射法在室温柔性衬底PET上制备了掺锆氧化锌(ZZO)透明导电薄膜。利用不同方法提高了ZZO薄膜的电阻率而未使其可见光透过率降低。X射线衍射(XRD)和扫描电子显微镜(SEM)表明,ZZO薄膜为六角纤锌矿结构的多晶薄膜。在有机衬底和玻璃衬底上制备ZZO薄膜的择优取向不同,前者为(100)晶面,而后者为(002)晶面。在有ZnO缓冲层的PET衬底上制备的ZZO薄膜电阻率比直接生长在玻璃衬底样品上的小。通过优化参数,在PET衬底上制备出了最小电阻率为1.7×10-3Ω.cm、可见光透过率超过93%的ZZO薄膜。实验表明,镀膜之前在柔性衬底上沉积ZnO缓冲层能有效地提高ZZO薄膜的质量。Different methods were reported to improve the conductivity of ZnO：Zr （ZZO） films deposited on flexible substrates by RF magnetron sputtering at room temperature without degrading the optical transmittance in the visible range. X-ray diffraction （XRD） and scanning electron microscopy （SEM） revealed that all the deposited films are polycrystalline with a hexagonal structure, but the preferred plane of ZZO films deposited on flexible substrates is （100） whereas that deposited on glass substrates is （002）. Under proper conditions, the electrical resisitivity of ZZO films deposited on ZnO-buffered flexible substrates significantly decreased compared with that deposited on bare glass substrates. The films with resistivity as low as 1.7 × 10^-3 Ω·cm and high optical transmittance of above 93 % have been obtained by improved methods. Experimental results show that depositing ZnO buffer layer on flexible substrates before deposition is an effective method to improve the quality of ZZO films.

关 键 词：掺锆氧化锌薄膜 柔性衬底 磁控溅射 透明导电薄膜 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055