6H-SiC埋沟MOSFET的C-V解析模型研究  

Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET

作　　者：王巍[1] 王玉青[1] 申君君[1] 唐政维[1] 秘俊杰[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《微电子学》2009年第1期124-127,140,共5页Microelectronics

基　　金：重庆市科委自然科学基金资助项目(CSTC2006BB2364)

摘　　要：研究了6H-SiC埋沟MOSFET器件的电容-电压特性,建立了解析模型。具体分析了埋沟MOSFET各种工作模式下的电容与栅电压之间的关系,考虑了SiO2/SiC界面态及pn结对电容-电压特性的影响。对模型进行了仿真分析验证,结果表明:在假设界面态密度分布均匀条件下,由于对界面态做了简化处理,因而在耗尽模式及夹断模式下的C-V特性计算结果与实验结果有所差异。C-V characteristics of 6H-SiC buried-channel MOSFET analytical model were investigated. C-V relationship in accumulation, inversion, depletion and pinch-off modes was discussed, and C-V characteristics in depletion mode and pinch-off mode were investigated in particular. Effects of the interface states in SiO2/SiC interface and p-n junction on C-V characteristics were taken into consideration in the model. Simulation results showed that the numerical results fit well with experimental data, and the discrepancy between two curves was due to the assumption of uniform distribution of interface state in the analytical model.

关 键 词：碳化硅 埋沟MOSFET C—V特性 界面态 

分 类 号：TN386.1[电子电信—物理电子学]