溅射条件对InSb薄膜方块电阻的影响  

The Effect of Sputtering Conditions on the Sheet Resistance of InSb Thin Films

作　　者：张小玲[1] 孙承松[1] 李云鹏[1] 温作晓[1] 

机构地区：[1]沈阳工业大学电子工程系,110023

出　　处：《传感器世界》1998年第3期11-15,共5页Sensor World

摘　　要：本文介绍了用射频溅射技术制备InSb薄膜的方法,探索了溅射电压,工作气压、衬底温度及基片电压等条件对膜的特性和结构的影响.着重讨论了溅射条件对膜方块电阻的影响,并初步得出其变化规律.This paper introduces the fabrication of InSb thin films using RF sputtering. The effect of sputtering conditions such as the voltage of sputtering, the voltage of substrate, substrate temperature and sputtering pressure on the properties and structures of InSb thin films are detected. Through experiments, it describes in detail the effect of sputtering conditions on the sheet resistance of Insb thin films, and the law of it is preliminarily given

关 键 词：溅射 薄膜 方块电阻 锑化铟 

分 类 号：TN304.23[电子电信—物理电子学]