微波ECR-CVD低温SiN_x薄膜的氢含量分析  

Hydrogen Content of SiN_x Films Deposited by ECR-CVD at Low Temperature

作　　者：叶超[1] 宁兆元[1] 汪浩 沈明荣 甘肇强 

机构地区：[1]苏州大学物理科学与技术学院薄膜材料实验室,苏州215006

出　　处：《功能材料》1998年第1期89-91,共3页Journal of Functional Materials

摘　　要：利用红外光谱技术研究了微波电子回旋共振( ECR)等离子体化学气相沉积 ( CVD)法在低温条件下制备的 Si Nx 膜的键结构和氢含量 ,分析了微波功率和后处理条件对膜含氢量的影响及其成因 ,提出适当提高微波功率是降低微波 ECR- CVD低温 Si Nx 膜中氢含量的可能途径。The hydrogen contents of SiN x films deposited by microwave electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) at low substrate temperature are investigated by infrared spectra technique. The effect of the microwave power, plasma and annealing treatment on hydrogen content in SiN x films is analyzed and discussed in terms of hydrogen bond formation. It is proposed that increasing microwave power properly is a possible way to decrease the hydrogen content in SiN x films.

关 键 词：薄膜 氢含量 微波 ECR-CVD 低温 氮化硅 

分 类 号：O484.5[理学—固体物理]