B^+注入HgCdTe快速热退火的研究  

STUDY OF B + IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING

作　　者：刘家璐[1] 张廷庆[1] 冯建华[1] 周冠山[1] 应明炯[2] 

机构地区：[1]西安电子科技大学微电子研究所 [2]电子工业部第11研究所

出　　处：《物理学报》1998年第1期47-52,共6页Acta Physica Sinica

摘　　要：借助二次离子质谱和俄歇电子能谱对Ｂ＋注入ＨｇＣｄＴｅ有无ＺｎＳ膜包封在快速热退火条件下表层的Ｈｇ损失进行了深入的分析．快速热退火温度为３００，３５０和４００℃，退火时间为１０ｓ．ＺｎＳ膜厚度为１６０ｎｍ．结果表明，３００℃，１０ｓ快速热退火后，有ＺｎＳ膜包封的ＨｇＣｄＴｅ表层没有Ｈｇ损失．对Ｂ＋注入ＨｇＣｄＴｅＮ＋Ｐ结快速热退火工艺流程进行了优化．结果表明，快速热退火放在光刻金属电极之后进行，可以改善结的特性．Abstract Hg loss of B + implanted HgCdTe with and without a ZnS film under rapid thermal annealing(RTA) has been analysed by secondary ion mass spectroscopy and Auger electron spectroscopy in detail. The temperatures for RTA are 300, 350 and 400℃, and the duration is 10s. The thickness of ZnS film is 160nm. Results obtained show that the surface layer of HgCdTe with a ZnS film does not show Hg loss after RTA (300℃,10s).The procedure of RTA for B + implanted HgCdTe forming N + P junction has been optimized. It was shown that RTA carried out after the lithography of the metal electrode can improve the junction characteristics.

关 键 词：硼离子 离子注入 碲镉汞 工艺优化 快速热退火 

分 类 号：TN304.26[电子电信—物理电子学] TN305.3