X波段30W内匹配GaNHEMT功率器件  

X-band 30 W Internally Matched GaN HEMTs

作　　者：李静强[1,2] 杨瑞霞[1] 冯震[2] 邱旭[2] 王勇[2] 冯志红[2] 默江辉[2] 杨克武[2] 张志国[2,3] 

机构地区：[1]河北工业大学,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]西安电子科技大学微电子学院,西安710071

出　　处：《固体电子学研究与进展》2008年第4期493-496,共4页Research & Progress of SSE

基　　金：天津市自然科学基金资助项目(项目编号:07JCZDJC06100);河北省自然科学基金资助项目(项目编号:F2007000098)

摘　　要：采用自主研发的SiC衬底GaN HEMT外延材料,研制了总栅宽为2mmGaN HEMT,利用负载牵引系统测试器件的阻抗特性,得出该器件源漏阻抗实部分别为6Ω和22Ω;设计并制作了四管芯合成器件的阻抗匹配网络,在频率为8GHz下测试,饱和输出功率为30W,功率增益在6dB以上,功率附加效率为38%,该结果目前在国内为首次报道。The 2mm-gatewidth GaN HEMT has been fabricated using AlGaN/GaN HEMT epi structure grown on the SiC substrates. Load-pull measurement has been used, and source and load impedance of 6 and 22 ohms are presented. Internal matching circuit for four dies of total gate width of 2 mm has been designed and fabricated. The resultant device delivers a saturation output power of 30 W, over 6dB power gain and 38% power added efficiency at the frequency 8 GHz. To the best of our knowledge this is the first report of 30 W AlGaN/GaN HEMT amplifier developed for X-band high power application in china.

关 键 词：氮化铱 高迁移率晶体管 阻抗 内匹配 

分 类 号：TN321[电子电信—物理电子学]