硅中氦氧共注入纳米孔氧化埋层的研究  

FORMATION OF NANOCAVITYCONTAINED OXIDE LAYER INDUCED BY COIMPLANTATION OF HeO IONS IN SILICON

作　　者：张苗 多新中[1,2] 林梓鑫[1,2] 周祖尧[1,2] 林成鲁[1,2] 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室 [2]中国科学院上海冶金研究所离子束开放研究实验室

出　　处：《功能材料与器件学报》1998年第1期13-18,共6页Journal of Functional Materials and Devices

基　　金：中国科学院九五基础性研究重点项目;国家自然科学基金

摘　　要：将１×１０１７／ｃｍ２的氦离子以３５ｋｅＶ的能量注入到单晶硅中，在硅表层下面形成纳米空腔。将１×１０１７／ｃｍ２的氧离子注入到空腔层的下方。用ＲＢＳ／Ｃ、ＳＲＰ及ＸＴＥＭ等测试手段对样品进行研究。结果表明，纳米空腔对氧有强烈的吸附作用，１００００Ｃ退火后氧从原注入位置释放，并被空腔俘获，形成含纳米孔的氧化埋层。氧与空腔的互作用抑制了纳米空腔的迁移、聚合。利用这一现象有望制备出纳米氧化埋层ＳＩＭＯＸ材料。 cavity band was formed in crystalline silicon by implanting of 1×1017/cm2 He+ at an energy of 35 keV 1× 1017/cm2 O+ ions were subsequently implanted beneath the cavity band The HeO ions coimplanted silicon was studied using RBS/C, SRP and XTEM The results indicate that the cavities have strong gettering effect to oxygen After a 10000C annealing, the implanted oxygen released from their original position and diffused to the cavity band, forming a nanocavitycontained oxide layer The precipitation of oxide on the cavity walls restricts the diffusion and coalescence of the cavities A new SIMOX structure which contains an oxidized porous layer may be formed basing on these phenomena

关 键 词：离子注入 纳米空腔 SOI 氦 氧化埋层 

分 类 号：TG139.4[一般工业技术—材料科学与工程]