Al_xGa_(1-x)N日盲紫外探测器及其焦平面阵列  

Solar-blind Photodetectors and Focal Plane Arrays Based on Al_xGa_(1-x)N

作　　者：赵文伯[1] 赵红[1] 叶嗣荣[1] 黄烈云[1] 唐遵烈[1] 罗木昌[1] 杨晓波[1] 廖秀英[1] 向勇军[1] 邹泽亚[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2009年第1期21-24,共4页Semiconductor Optoelectronics

摘　　要：报道了320×256元AlxGa1-xN日盲型紫外探测器及其焦平面阵列探测器的研制情况，介绍了材料生长、器件制备工艺和器件的光电特性。器件的开启电压大于3．5V，-0．5V偏压时暗电流小于1．2×10^-12A（φ=300ttm台面），光谱响应范围260～280nm，268nm峰值波长的响应度大于0．095A／W。器件实现了日盲紫外成像演示。Developments of 320 × 256 solar-blind photodetectors and focal plane arrays based on AlxGa1-xN material are reported. The details in AlxGa1-xN material growth and device fabrication processes are described. Current-voltage relationship of the diode exhibits that the turn-on voltage is greater than 3.5 V,and the dark current is as low as 1.2×10^-12 A at --0.5 V （φ=300μm mesa）. Spectral response of the diode reveals a peak responses of 0.095 A/W at 268 nm. The imaging experiment made with solar blind UV light source was demonstrated successfully.

关 键 词：ALXGA1-XN 日盲探测器 紫外焦平面阵列 PIN光电二极管 

分 类 号：TN364.2[电子电信—物理电子学]