新型高压半超结功率MOSFET的优化设计  

Design and Optimum of a Novel High Breakdown Voltage Semi-Superjunction Power MOSFET

作　　者：荆吉利[1] 钱钦松[1] 李海松[1] 孙伟锋[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096

出　　处：《电子器件》2009年第1期21-23,共3页Chinese Journal of Electron Devices

摘　　要：给出了一个完整的半超结MOS的设计方法,包括超结部分浓度的确定,电压支持层部分的深度和浓度的优化。借助二维器件仿真讨论了在原胞尺寸不变的情况下导通电阻和击穿电压的折中关系的优化方法。通过模拟得到了一个750 V,特征导通电阻为32 mΩ.cm2的半超结结构。结果表明在不增加外延次数,工艺成本和难度的情况下,深宽比为5半超结MOS的特征导通电阻比VDMOS的下降了64%,比超结MOS的下降了8%。A complete approach to design the semi-superjunction MOS is proposed.In this approach,the optimum doping density of the superjunction,the optimum doping density and the thickness of the bottom assist layer are found.An approach to improve the relation between the on-resistance and the breakdown voltage is discussed under the constant cell pitch with the help of a two dimensional device simulator.The semi-superjunction MOS realizes both the breakdown voltage of 750 V and the on-resistance of 32 mΩ·cm2.The results show that the on-resistance of semi-superjunction MOS is lower than that of VDMOS 64%,lower than that of superjunction MOS 8% even under the constant aspect ratio of 5 under the constant process difficulty.

关 键 词：电力半导体器件 半超结 电压支持层 击穿电压 

分 类 号：TN312.4[电子电信—物理电子学] TN386.1