小尺寸VDMOS阈值电压温度特性模型  

Temperature Characteristics Model of Threshold Voltage in Small Size VDMOS

作　　者：姚进[1] 张敏[1] 沈克强[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《电子器件》2009年第1期89-92,共4页Chinese Journal of Electron Devices

摘　　要：研究了温度对VDMOS阈值电压中各参数的影响,确定了受温度影响较大的参数。为提高模型的精确度,建立了短沟道的阈值电压温度特性模型,模型考虑到VDMOS元胞结构中的小尺寸效应。最后将250K至500K温度范围内模型的阈值电压温度特性与MEDICI的仿真结果及忽略短沟道效应的温度模型进行比较,验证了模型的准确性。The effects of temperature on the parameters of threshold voltage in VDMOS were researched and parameters affected by the temperature were determined.In order to enhance the accuracy,a temperature characteristic model of threshold voltage in short channel is presented which takes into account the small size effect in the cellular structure of VDMOS.Compared the temperature model with simulation results from Medici and ignored the short-channel effect at the range of 250K to 500K,this model is proved by its accuracy.

关 键 词：VDMOS 温度特性 阈值电压 短沟道效应 MEDICI 

分 类 号：TN432[电子电信—微电子学与固体电子学]