BJT和MOSFET的非线性研究  

Study of Non-linear Characteristics of BJT and MOSFET

作　　者：唐正明[1] 周永宏[1] 

机构地区：[1]西华师范大学物理与电子信息学院,四川南充637002

出　　处：《西华师范大学学报（自然科学版）》2009年第1期100-103,共4页Journal of China West Normal University(Natural Sciences)

基　　金：西华师范大学科研启动基金资助项目(05B019)

摘　　要：信号的放大需要放大电路工作在其近似的线性条件下才有意义.借助数学方法,对构成放大的电路的重要器件B JT和MOSFET的非线性进行了对比,并结合其各自的内部结构分析了2类器件非线性的产生和差异.目的在于为今后研制开发线性特性更好的放大元件提供指导.Only under the linear condition, the enlargement of signal can be useful. With the help of mathematics mesthod we can study the non-linear chareteristies of the BJT and the MOSFET. After anlyzing the internal structures of them we can see the generation and the difference of their non-linear characteristics with the purpose of providing instruction for developing of newly component with much better linear characteristics in the future.

关 键 词：BJT MOSFET TAYLOR公式 非线性 

分 类 号：TN3[电子电信—物理电子学]