超高真空化学气相淀积法生长的n-Si/i-p^+-i SiGe/n-Si结构的透射电镜和二次离子质谱分析  

Transmission Electron Microscopy and Secondary Ion Mass Spectrometry Study of n Si/i p + i SiGe/n Si Structures Grown by Ultra High Vacuum Chemical Vapor Deposition

作　　者：张进书[1] 金晓军[1] 钱佩信[1] 罗台秦[2] 

机构地区：[1]清华大学微电子学研究所 [2]香港科技大学电机与电子工程系

出　　处：《Journal of Semiconductors》1998年第5期394-396,共3页半导体学报（英文版）

摘　　要：本文用透射电镜（ＸＴＥＭ）和二次离子质谱（ＳＩＭＳ）分析了由超高真空化学气相淀积法（ＵＨＶＣＶＤ）生长的ｎ－Ｓｉ／ｉ－ｐ＋－ｉＳｉＧｅ／ｎ－Ｓｉ结构，发现在硅上外延生长ｉ－ｐ＋－ｉＳｉＧｅ时，在靠近Ｓｉ的ｉ／ｐ＋ＳｉＧｅ界面处存在一个很薄的层，但在ｉ－ｐ＋－ｉＳｉＧｅ上外延生长Ｓｉ时，无此现象产生．此薄层是由在硅上外延生长ｉ－ｐ＋－ｉＳｉＧｅ时硼原子聚集在靠近Ｓｉ的ｉ／ｐ＋ＳｉＧｅ界面处形成的高掺杂薄层．高掺杂的薄层影响由此结构制备的异质结双极晶体管（ＨＢＴ）的ＢＣ结的正向导通电压．Abstract n Si/i p + i SiGe/n Si structures grown by ultra high vacuum chemical vapor deposition are investigated by transmission electron microscopy and secondary ion mass spectrometry. It is found that a very thin layer exists at the interface of i/p + SiGe closer to the Si substrate when i p + i SiGe is grown on Si, and this phenomenon does not occur when Si is grown on i p + i SiGe. This thin layer is heavily boron doped due to the accumulation of boron atom at the interface of i/p + SiGe closer to the Si substrate. As a result, the turn on voltage of the BC junction of the SiGe HBT made from this structure was affected seriously

关 键 词：UHVCVD 硅 外延生长 锗化硅 

分 类 号：TN304.24[电子电信—物理电子学] TN304.054