Pt-Ni/p-InP低阻欧姆接触的机理研究  

Mechanism of Non Alloyed Pt Ni/p InP Low Resistance Ohmic Contact

作　　者：李秉臣[1,2] 王玉田[1,2] 庄岩[1,2] 

机构地区：[1]中国科学院半导体研究所 [2]国家光电子工艺中心

出　　处：《Journal of Semiconductors》1998年第5期397-400,共4页半导体学报（英文版）

摘　　要：本文利用Ｘ射线衍射和ＡＥＳ（俄歇）方法，深入地研究了ＲＦ磁控溅射淀积的Ｐｔ－Ｎｉ／ｐ－ＩｎＰ（１００）非合金膜系在热退火过程中Ｐｔ和Ｎｉ与衬底ＩｎＰ中的Ｉｎ和Ｐ形成稳定化合物的行为。Abstract Pt Ni/p InP(100) non alloyed thin films deposited by magnetron RF sputtering are thoroughly studied by using XRD and AES. Stable compounds formed by Pt,Ni and In,P on the InP substrate were obtained in the process of annealing. The basic reasons for obtaining the contact resistance as low as 3×10 -6 Ω·cm 2 are revealed.

关 键 词：半导体器件 欧姆接触 磷化铟 

分 类 号：TN304.25[电子电信—物理电子学] TN305.93