应变Si／(001)Si1-xGex能带结构模型  

Band Structure Models of Strained Si/(001)Si_(1-x)Ge_x

作　　者：宋建军[1] 张鹤鸣[1] 戴显英[1] 胡辉勇[1] 宣荣喜[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《固体电子学研究与进展》2009年第1期14-17,共4页Research & Progress of SSE

基　　金：国家部委资助项目(Nos.51308040203,9140A08060407DZ0103)

摘　　要：应变Si材料的能带结构是研究设计高速/高性能器件和电路的理论基础。采用结合形变势理论的K.P微扰法建立了(001)面弛豫Si1-xGex衬底上生长的张应变Si的能带结构模型。结果表明:[001]、[001]方向能谷构成了张应变Si导带带边,其能量值随Ge组分的增加而变小;导带劈裂能与Ge组分成线性关系;价带三个带边能级都随Ge组分的增加而增加,而且Ge组分越高价带带边劈裂能值越大;禁带宽度随着Ge组分的增加而变小。该模型可获得量化的数据,对器件研究设计可提供有价值的参考。The band structure of strained Si is the theoretical basis for the design of the high-speed and high-performance devices and circuits. The band structure models of strained Si on （001） relaxed Si1-xGex were presented using K. P perturbation method coupled with deformation potential theory. The results show that the [001], [00^-1]valleys constitute the conduction band （CB） edge, which moves down in electron energy as Ge fraction （x） increases, and the CB splitting energy is in direct proportion to x as well as all the valence band （VB） edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy with increasing x were found. The quantitative data from the models supply valuable references to the devices design.

关 键 词：应变硅 K.P法 能带结构 

分 类 号：O471.5[理学—半导体物理]