双层金属布线中隔离介质淀积工艺研究  

Investigation into Dielectric Deposition for Double-Layer Metallization

作　　者：方圆[1] 

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《微电子学》2009年第2期272-275,共4页Microelectronics

摘　　要：隔离介质淀积是微波硅功率器件双层金属布线工艺中的核心工序。从隔离介质结构层次的选取入手,通过理论分析,选取SiO2-Si3N4两层介质为最佳隔离介质结构;着重对隔离介质淀积工艺进行深入研究。通过实验对比分析,确定芯片的隔离介质淀积工艺条件,从而避免光刻胶、腐蚀液等物质残留在芯片内部,提高双层金属布线的可靠性。Inter-level dielectric deposition is one of key process steps for double-layer metaltization of Si microwave power devices. Based on theoretic analysis, SiO2-Si3N4 compound films were chosen as inter-layer dielectric film.An indepth investigation was made on the deposition of dielectrics. And process conditions were obtained through experiment. Results indicated that reliability of the double-layer metallization was improved by optimizing deposition process to eliminate photoresist and/or corrosive residuals on the chip.

关 键 词：微波功率器件 双层金属布线 隔离介质 淀积工艺 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]