利用分步试验设计表征/优化工艺空间均匀性  

Characterization and Optimization of Process Spatial Uniformity Using Sequential Experimental Design

作　　者：游海龙[1,2] 贾新章[1,2] 徐岚[3] 陈亚兰[3] 

机构地区：[1]西安电子科技大学微电子学院,西安710071 [2]宽禁带半导体材料与器件教育部重点实验室,西安710071 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2009年第2期285-288,共4页Microelectronics

基　　金：模拟集成电路国家级重点实验室基金资助项目(9140C09040206DZ0101)

摘　　要：半导体制造工艺成品率对空间差异越来越敏感,需要表征与优化工艺空间均匀性。利用两步试验设计方法,针对六输入变量的热氧化工艺,仅需31次试验,便建立了表征工艺目标和空间均匀性响应曲面模型。利用该模型优化工艺,得到了满足其他工艺指标下工艺空间均匀性最优的工艺设置。片间非均匀性从1.44%减小到0.77%,片内非均匀性从0.2%减小到0.12%。Semiconductor manufacturing process yield becomes more and more sensitive to spatial difference, so characterizing and optimizing the process spatial uniformity is needed. With two-step experimental design method, only 31 experiments were designed for thermal oxidization process of six input factors. Response surface models of film thickness and process spatial uniformity were constructed through experiment. The optimum process sets of uni- formity that meet other process goals were obtained using the model. The wafer-to-wafer non-uniformity of film was reduced from 1.44% to 0. 77% ,and within-wafer non-uniformity of film was reduced from 0. 2% to 0. 12%.

关 键 词：半导体工艺 工艺空间均匀性 分步试验设计 响应曲面模型 

分 类 号：TN711.1[电子电信—电路与系统] TN405