Surface morphology of [110] a-plane GaN growth by MOCVD on [1■02] r-plane sapphire  

作　　者：许晟瑞 郝跃 段焕涛 张进城 张金凤 周晓伟 李志明 倪金玉 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi dian University

出　　处：《Journal of Semiconductors》2009年第4期14-17,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No. 60736033);the State Key Development Program for Basic Research of China (No. 513270407)

摘　　要：Nonpolar a-plane [110] GaN has been grown on r-plane [1■02] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to the c-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used for a-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.Nonpolar a-plane [110] GaN has been grown on r-plane [1■02] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to the c-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used for a-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.

关 键 词：GAN AFM HRXRD A-PLANE 

分 类 号：TN304[电子电信—物理电子学]