一种f_t为176GHz、大电流多指结构的InGaAs/InP异质结双极晶体管(英文)  

HIGH CURRENT,MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH f_t OF 176GHz

作　　者：金智[1] 程伟[1] 刘新宇[1] 徐安怀[2] 齐鸣[2] 

机构地区：[1]中国科学院微电子研究所微波器件与集成电路研究室,北京100029 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《红外与毫米波学报》2009年第2期81-84,共4页Journal of Infrared and Millimeter Waves

基　　金：The project is partly supported by the National Basic Research Program of China(2002CB311902)

摘　　要：针对毫米波电路对大电流、高截止频率器件的要求,利用平坦化技术,设计并制作成功了结构紧凑的四指合成InGaAs/InP异质结双极晶体管.实验结果表明发射极的宽度可减小到1μm.Kirk电流可达到110mA,电流增益截止频率达到176GHz.这种器件有望在中等功率的毫米波电路中有所应用.To meet the requirements of millimeter wave circuits for high-current and high cutoff-frequency devices, a compact 4-finger InGaAs/InP single heterostructure bipolar transistor（HBT） was designed and fabricated successfully by using planarization technology. The results show that the width of the emitter fingers is as small as 1 μm, the high Kirk current of 4-finger HBT reaches 110mA, and the current gain cutoff frequency is as high as 176GHz. The device is promising on the applications in the medium-power circuits operating at millimeter-wave range.

关 键 词：INP 异质结双极晶体管 高电流 高频 

分 类 号：TN385[电子电信—物理电子学]