AlGaN/GaN HEMT栅槽低损伤刻蚀技术  

Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique

作　　者：黄俊[1] 魏珂[1] 刘新宇[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《功能材料与器件学报》2009年第2期193-196,共4页Journal of Functional Materials and Devices

基　　金：国家重点基础研究发展规划(批准号:2002CB311903);中国科学院重点创新(批准号:KGCX2-SW-107)资助项目

摘　　要：对AlGaN/GaNHEMT栅槽低损伤刻蚀技术进行研究,通过加入小流量的具有钝化缓冲作用的C2H4,对Cl2/Ar/C2H4的工艺条件进行了优化,有效地降低了栅槽刻蚀造成的AlGaN表面损伤和器件退化,同时防止反应生成物淀积在栅槽表面,改善了肖特基结特性,提高了栅极调控能力,实现凹栅槽的低损伤刻蚀。A systematic study of low damage etching recessed gate of AlGaN/GaN HEMT is performed adding a little flux of passivating gas C2H4 to the Cl/Ar inductively coupled plasma, and the Cl2/Ar/ C2H4 is optimized. The surface damage and degeneration of AlGaN are avoid and the etching resultant is removed from the surface of the recessed gate. The Schottky characteristics and gate control ability are improved and the low damage etching recessed gate technique is achieved.

关 键 词：ALGAN/GAN HEMT 凹栅槽 低损伤刻蚀 C2H4 

分 类 号：TN325[电子电信—物理电子学]