溅射工艺条件对氧化钒欧姆接触特性的影响  

Influences of Sputtering Conditions on Preparation of VO_x Thin Film and Its Ohmic Contact to Metal Electrode

作　　者：董翔[1] 吴志明[1] 王涛[1] 许向东[1] 李伟[1] 蒋亚东[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体光电》2009年第2期236-241,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60806021)

摘　　要：采用反应磁控溅射并在氧氛围下进行后退火处理的方式,制备了氧化钒薄膜。尝试了在氧化钒上以不同衬底温度和溅射功率等工艺条件溅射金属薄膜电极。通过对氧化钒-金属接触的电流-电压(I-V)测试的数据进行分析拟合,研究了氧化钒薄膜表面性质和测试偏压的变化对I-V特性曲线欧姆系数的影响。结果表明在化学计量比约为VO2.15的非晶氧化钒薄膜上,溅射的金属电极随着溅射功率和测试偏压的提高,I-V特性曲线的线性度得到了逐步的改善。通过比较Ni/Cr,Ti及Al不同金属电极的接触性能,提出了合理的欧姆接触工艺条件以及电极工作电压范围。After VOx thin films were fabricated by reactive magnetron sputtering, and annealed at the oxygen atmosphere, the metal film electrodes were sputtered with different substrate temperatures and sputtering power. The influence of the surface condition of VO~ thin films and test voltage level on the Ohmic coefficient of I-V curve was investigate by analyzing the I-V test data of the Metal-VOx Contact. As a result, on an amorphous VOx thin films with a stoichiometry about O/V≈2.15, the linearity of the I-V curve improved with the increase of the sputtering power and test voltage level applied on the metal electrode. By comparing contact performance of the Ni/Cr, Ti and Al electrode, the best sputtering parameters to form an Ohmic contact and the available bias voltage zone were proposed.

关 键 词：溅射功率 衬底温度 氧化钒薄膜 金属薄膜电极 欧姆接触 

分 类 号：TN305.92[电子电信—物理电子学]