低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长  

Low Threshold 1.3μm InGaAsP/InP Strained Compensated Multi Quantum Well DFB Lasers Grown by LP MOCVD

作　　者：陈博[1,2] 王圩[1,2] 汪孝杰[1,2] 张静媛[1,2] 朱洪亮[1,2] 周帆[1,2] 王玉田[1,2] 马朝华[1,2] 张子莹[1,2] 刘国利[1,2] 

机构地区：[1]国家光电子工艺中心 [2]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第3期218-220,共3页半导体学报（英文版）

摘　　要：本文报道了用低压－金属有机化学气相淀积（ＬＰ－ＭＯＣＶＤ）方法制作１．３μｍ应变补偿多量子阱结构材料．Ｘ射线双晶衍射摇摆曲线可清晰地看到±４级卫星峰和卫星峰间的Ｐｅｎｄｅｌ－ｌｏｓｏｎｇ条纹．整个有源区的平均应变量几乎为零．用掩埋异质结（ＢＨ）条形工艺制备的含一级光栅的ＤＦＢ激光器室温下阈值电流２～４ｍＡ，外量子效率０．３３ｍＷ／ｍＡ，线性输出光功率达３０ｍＷ，边模抑制比（ＳＭＳＲ）大于３５ｄＢ．２０～４０℃下的特征温度Ｔ０为６７Ｋ．Abstract μm InGaAsP/InP strained compensated multi quantum wells structure grown by Low Pressure Metalorganic Chemical Vapor Deposition (LP MOCVD) was proposed. The ±4 order satellite peaks and Pendellosung stripes between satellite peaks were appeared clearly in the X ray double crystal diffraction rocking curve. The average strain of active region is nearly zero. The threshold current of Buried Heterostructure (BH) MQW DFB laser with first order grating is 2￣4mA mostly. The external differential quantum efficiencys is 0.33mW/mA. The side mode suppression ratio (SMSR) is more than 35dB. The linear output light power is up to 30mW. The characteristic temperature is 67K between 20￣40℃.

关 键 词：DFB激光器 LP-MOCVD 量子阱 生长技术 

分 类 号：TN248.4[电子电信—物理电子学] TN304.054