S_2Cl_2钝化的GaAs表面的同步辐射光电子能谱研究  

Synchrotron Radiation Photoemission Study of S 2Cl 2 Treated GaAs(100) Surfaces

作　　者：胡海天[1] 丁训民[1] 袁泽亮[1] 李哲深[1] 曹先安[1] 侯晓远[1] 陆尔东[2] 徐世红[2] 徐彭寿[2] 张新夷[2] 

机构地区：[1]复旦大学应用表面物理国家重点实验室 [2]中国科学技术大学国家同步辐射实验室

出　　处：《Journal of Semiconductors》1998年第4期316-320,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：前已发现，将ＧａＡｓ（１００）晶片浸入Ｓ２Ｃｌ２或Ｓ２Ｃｌ２＋ＣＣｌ４溶液是实现ＧａＡｓ表面钝化的一种有效途径．用同步辐射光电子能谱研究这种表面能直接测量Ｓ２ｐ芯能级谱，从而揭示，在浸泡后的表面存在多种形态的含硫化合物．ＡｓｘＳｙ是其中的主要成分，但轻度退火就能去除．随着退火过程中Ｓ原子从Ａｓ－Ｓ转移到Ｇａ－Ｓ，Ｇａ３ｄ谱中始终出现两个与Ｇａ－Ｓ相关的分量。Abstract Dipping of GaAs(100) wafers in S 2Cl 2 or S 2Cl 2+CCl 4 solution has been previously found effective to passivating the GaAs surface. Application of synchrotron radiation photoelectron spectroscopy to such a surface makes it posssible to directly measure the S 2p core level spectra and hence reveals the presence of various S containing species on the surface. Bulk like As x S y phases are dominant on the as treated surface, but easy to remove by a mild annealing. With transfer of S atoms from As-S to Ga-S during annealing, two Ga-S related components remain in the Ga 3d spectra, indicating that steady passivation is associated with the presence of Ga-S bonds at the surface.

关 键 词：砷化镓 SRPES 钝化 

分 类 号：TN304.23[电子电信—物理电子学]