基于碳纳米管的CMOS逻辑电路的模拟和优化  

Modeling and Optimizing of Carbon Nanotube Based CMOS Logic Circuit

作　　者：王昦 张志勇[1] 王胜 陈清[1] 

机构地区：[1]纳米器件物理与化学教育部重点实验室,北京大学信息科学技术学院电子系,北京100871

出　　处：《北京大学学报（自然科学版）》2009年第3期415-420,共6页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：国家自然科学基金资助项目(60440420450,60571002)

摘　　要：基于查表模型,利用SPICE(simulation program with integrated ciruit emphasis)电路模拟软件,首次模拟了互补型碳纳米管(CNT)场效应晶体管组成的反相器,模拟结果和实验结果吻合,实现了碳纳米管场效应晶体管的实际测量数据和半经验查表模型的衔接。利用直流特性分析和瞬态特性分析等仿真手段研究了CNT CMOS反相器的功耗和门延迟特性随工作电压和器件阈值电压变化的关系,并对电路设计和工作状态提出了优化方案。进一步模拟了与非门和或非门,并提出了电路的优化方案。Carbon nanotube based CMOS （complementary metal-oxide-semiconductor） field effect transistor inverters were modeled through SPICE（simulation program with integrated ciruit emphasis） by using table-lookup model. Simulation results were verified by the experimental results and good agreement was achieved. The effects of supplied voltage and the threshold voltage to the power and the delay characteristics of the inverters were investigated by DC analysis and TRAN analysis, and optimum strategy was given. In addition, optimum strategies for NOR and NAND logic circuits were given by the simulation using the semi-empirical table-lookup model.

关 键 词：碳纳米管 场效应晶体管 查表模型 反相器 直流特性 瞬态特性 

分 类 号：TN791[电子电信—电路与系统]