光敏BJMOSFET的物理模型及数值模拟  

Physical Model and Numerical Simulation of Photo-BJMOSFET

作　　者：曾云[1] 谢海情[1] 曾健平[1] 张国梁[1] 王太宏[1] 

机构地区：[1]湖南大学物理与微电子科学学院,湖南长沙410082

出　　处：《湖南大学学报（自然科学版）》2009年第5期47-50,共4页Journal of Hunan University:Natural Sciences

基　　金：湖南省研究生科研创新项目资助;湖南省科技计划项目资助(2008FJ3123)

摘　　要：基于SOI薄膜,提出一种引入P+N注入结的光敏BJMOSFET(Bipolar JunctionMetal-Oxide-Semiconductor Field Effect Transistor)结构.在此光敏器件中,栅电压使薄膜耗尽但不反型,光生载流子的复合可以忽略.根据基本的半导体方程,建立该器件的物理模型.数值模拟结果显示:在光敏BJMOSFET中,光生电子和空穴都参与导电,和传统的MOS管相比具有较高的灵敏度.此外,它能消除CMOS工艺下PN结大的暗电流,完全与CMOS工艺兼容.A novel structure of BJ MOSFEU adding P ＋ N film was developed. In this device, recombination of carriers injection on the Semiconductor on Insulator（SOD was ingnored due to operating in depletion region. Its physical model was presented based on standard semiconductor equation. Numerical results indicate that the photon-generated electron and photon-generated hole are both the carriers in photo-BJMOSFET, thus it is more sensitive than the conventional MOS. It can also eliminate the big dark current of PN junction under CMOS technology, and is compatible with CMOS technology.

关 键 词：光电晶体管 BJMOSFET 物理模型 数值模拟 

分 类 号：TN364[电子电信—物理电子学]