电沉积法制备ZnO薄膜的结构与光电性能研究  

Study on the Structural and Optoelectronic Properties of ZnO Films Fabricated by Electro-deposition

作　　者：李丹[1] 沈鸿烈[1] 鲁林峰[1] 黄海宾[1] 李斌斌[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《压电与声光》2009年第3期414-417,共4页Piezoelectrics & Acoustooptics

基　　金：国家"八六三"计划基金资助项目(2006AA03Z219);南京航空航天大学引进人才基金资助项目(S0417061);长江学者和创新团队发展计划基金资助项目(IRT0534)

摘　　要：以硝酸锌和硝酸钾混和溶液为电解液，采用两电极体系在SnO2：F（FTO）片和p-Si（100）衬底上用不同沉积电压制备了c轴取向的ZnO薄膜。用X-射线衍射、扫描电子显微镜和分光光度计分析了薄膜的相结构，晶粒尺寸和光吸收特性。发现薄膜的（002）衍射峰强度随着沉积电压的增加而显著增强；薄膜中晶粒为典型的六方柱状结构，且基本与衬底垂直，晶粒尺寸为200-400nm；薄膜的光学禁带宽度为3．34eV。光照时，ZnO／Si异质结二极管呈明显的光生电流效应。A two-electrode electro-deposition system was employed to fabricate c-axis oriented ZnO films on a FTO wafer and p-Si（100） substrate at different voltages by using the Zn（NO3 ）/KNO3 mixed solution as the electrolyte. The X-ray diffraction, scanning electron microscopy, and optical spectroscopy were used to analyze the structural properties, the grain size, and the absorption properties of the films. It was found that the （002） peak intensity in XRD patterns increased apparently with the deposition voltage increasing. The grain shape was typically hexa- gonal with the grain size between 200-400 nm, which was almost vertical to the substrate. An optical band gap of 3.34 eV in the films was obtained from the absorption spectra. Under light illumination, the ZnO/Si heterojunetion diode presented a remarkable photocurrent effect.

关 键 词：ZNO薄膜 电沉积 异质结二极管 光生电流效应 

分 类 号：O472[理学—半导体物理] TN304.2[理学—物理]