快速热处理工艺下金属杂质对铸造多晶硅少子寿命的影响  

EFFECT OF TRANSITION-METAL CONTAMINATION ON MINORITY LIFETIME IN CAST MULTI-CRYSTALLINE SILICON UNDER RAPID THERMAL PROCESSING

作　　者：陈玉武[1] 郝秋艳[1] 刘彩池[1] 赵建国[1] 吴丹[1] 王勇[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130

出　　处：《太阳能学报》2009年第5期611-614,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(50572022)

摘　　要：利用离子注入技术在铸造多晶硅中分别引入铜、铁、镍杂质玷污,用微波光电导衰减(μ-PCD)仪测试技术研究了铜、铁、镍杂质对硅片少子寿命的影响。研究发现:原生铸造多晶硅片和离子注入铜、铁、镍杂质的多晶硅片经1000℃常规热处理2h后少子寿命值都会降低,下降幅度基本一致。原生硅片在低中温条件下,少子寿命值呈现先下降后上升的趋势;当硅片经高温RTP后,其少子寿命值得到明显改善。低中温RTP条件下,经铜、镍杂质玷污的硅片随着退火温度的升高,少子寿命变化不大。高温RTP条件下,经铜、铁、镍杂质玷污后硅片的少子寿命迅速下降。实验结果表明高温RTP能够提高杂质含量较低硅片的少子寿命,而对杂质含量较高硅片的少子寿命有负面影响。The effects of the transition metals,such as copper, iron, nickel on minority lifetime in cast multi-crystalline silicon under a rapid thermal process were investigated. It is found that the minority cartier lifetime of the as-grown samples and transition-metal contaminated samples decresas obviously at conventional annealing ternperature 1000℃ for 2 hours. The minority carrier lifetime of the as-grown samples increases noticeably after RTP at high temperatures, and the lifetime of wafers after annealing decreases silightly with increasing of annealing temperature but has a recovery at RTP 1000℃. The minority carrier lifetime changes following copper and nickel contamination at mid and low temperature（below 900℃）. However, the minority carrier lifetime decreases sharply following copper, iron and nickel contamination at high temperatures （1000℃,1100℃）. These results indicated that high temperature RTP could improve the minority carrier lifetime of wafers with low-impurity concentrations, but they have an negative effects on wafers with high-impurity concentrations.

关 键 词：铸造多晶硅 RTP 少子寿命 杂质 缺陷 

分 类 号：O474[理学—半导体物理] O522.1[理学—物理]