3～10GHz SiGe HBTs超宽带低噪声放大器的设计  

Design of a 3～10 GHz Ultra-Wideband Low Noise Amplifier Based on SiGe HBTs

作　　者：李佳[1] 张万荣 谢红云[1] 金冬月[1] 沈珮[1] 甘军宁[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子器件》2009年第2期311-314,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目资助(60776051;60376033);北京市自然科学基金项目资助(4082007);北京市教委科技发展计划项目资助(KM200710005015);北京市属市管高校中青年骨干教师培养计划项目资助(102(KB)-00856);北京市优秀跨世纪人才基金项目资助(67002013200301);北京工业大学青年科研基金资助(97002013200701);北京工业大学博士科研启动费资助(52002013200701)

摘　　要：根据UWB（Ultra-wideband）无线通信标准,提出了一款超宽带低噪声放大器并进行了设计。该放大器选用高性能的SiGe HBTs,同时采用并联和串联多重反馈的两级结构,以达到超宽频带、高增益、低噪声系数以及良好的输入输出匹配的目的。仿真结果表明,放大器在3-10 GHz带宽内,增益S21高达21 dB,增益平坦度小于1.5 dB,噪声系数在2.4~3.3 dB之间,输入输出反射系数（S11和S22）均小于-9 dB,并且在整个频带内无条件稳定。所有结果表明该LNA性能良好。Based on the standard of UWB（Ultra-wideband） wireless communication, an ultra-wideband low noise amplifier（LNA） is proposed and designed. In this LNA, high performance SiGe HBTs are chosen, two stages structure with multiple shunt and series feedback loops are adopted to achieve ultra-wideband, high gain, low noise figure, and good input and output impedance match. The simulation results show the LNA has gain of 21 dB with 1.5 dB variation, noise figure varies between 2. 4 to 3.3 dB, and input and output reflections（S11 and S22） are both less than --9 dB over 3 to 10 GHz. Meanwhile, the LNA is unconditionally stable in the whole band. All the results exhibit the LNA has good performance.

关 键 词：射频放大器 低噪声放大器 电路设计 超宽带 SIGE HBTS 

分 类 号：TN722.25[电子电信—电路与系统]