云南高校图书馆联盟文献共享服务平台- HBTS

HBTS: 作品数：16被引量：19H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：金冬月谢红云邱建军沈珮李佳更多>>; 相关机构：北京工业大学西安电子科技大学中国科学院哈尔滨工业大学更多>>; 相关期刊：《Journal of Donghua University(English Edition)》《Chinese Physics B》《Chinese Physics Letters》《北京工业大学学报》更多>>; 相关基金：国家自然科学基金北京市自然科学基金北京市教委科技发展计划国家重点基础研究发展计划更多>>

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout被引量：2: 《Chinese Physics B》2019年第9期373-380,共8页Rui Chen Dong-Yue Jin Wan-Rong Zhang Li-Fan Wang Bin Guo Hu Chen Ling-Han Yin Xiao-Xue Jia; Project supported by the National Natural Science Foundation of China(Grant Nos.61006059 and 61774012);Beijing Municipal Natural Science Foundation,China(Grant No.4143059);Beijing Municipal Education Committee,China(Grant No.KM201710005027);Postdoctoral Science Foundation of Beijing,China(Grant No.2015ZZ-11);China Postdoctoral Science Foundation(Grant No.2015M580951);Scientific Research Foundation Project of Beijing Future Chip Technology Innovation Center,China(Grant No.KYJJ2016008); Based on the thermal network of the two-dimensional heterojunction bipolar transistors(HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resist...; 关键词：HETEROJUNCTION BIPOLAR transistors(HBTs) array THERMAL effects THERMAL resistance MATRIX THERMAL design

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature被引量：1: 《Science Bulletin》2019年第7期469-477,共9页Guofang Yu Renrong Liang Xiawa Wang Jun Xu Tian-Ling Ren; supported by the National Key Research and Development Program of China (2016YFA0200300, 2016YFA0200400);the National Science and Technology Major Project of China (2016ZX02301001);the National Natural Science Foundation of China (61574083, 61434001);the National Basic Research Program of China (2015CB352101);Special Fund for Agroscientific Research in the Public Interest of China (201303107);Research Fund from Beijing Innovation Center for Future Chip;support of the Independent Research Program of Tsinghua University (2014 Z01006);Beijing Natural Science Foundation (4184091);Shenzhen Science and Technology Program (JCYJ2015083119 2224146); In this work, the device performances of discrete and integrated SiGe heterojunction bipolar transistors(HBTs) with different device structures from 300 to 4.8 K were investigated. The turn-on voltages of baseemitter ...; 关键词：SIGE HBTS Quantum computing CRYOGENIC temperature ANALYTICAL model

Total ionizing dose effects of domestic Si Ge HBTs under different dose rates被引量：4: 《Chinese Physics C》2016年第3期104-108,共5页刘默寒陆妩马武英王信郭旗何承发姜柯李小龙荀明珠; The total ionizing radiation（TID） response of commercial NPN silicon germanium hetero-junction bipolar transistors（Si Ge HBTs） produced domestically are investigated under dose rates of 800 m Gy（Si）/s and 1.3 m...; 关键词：SiGe HBTs TID ELDRS annealing

Source of Low Frequency Noise in SiGe HBTs: 《Journal of Donghua University(English Edition)》2015年第6期1052-1054,共3页王凯刘远邓婉玲; The performance of low frequency noise(LFN)in SiGe heterojunction bipolar transistors(HBTs)is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based...; 关键词：SIGE HETEROJUNCTION BIPOLAR transistors(HBTs) low frequency noise

宽温区高热稳定性SiGe HBT的基区优化设计: 《北京工业大学学报》2015年第5期686-692,共7页付强张万荣金冬月赵彦晓张良浩; 国家自然科学基金资助项目(61006059);北京市自然科学基金资助项目(4142007);北京市教委科技发展计划项目(KM200910005001); 为了提高SiGe异质结双极型晶体管(heterojunction bipolar transistors,HBTs)电流增益和特征频率温度热稳定性,首先研究基区杂质浓度分布对基区Ge组分分布为矩形分布的SiGe HBT电流增益和特征频率温度敏感性的影响,基区峰值浓度位置逐...; 关键词：SiGe异质结双极型晶体管(HBTs) 温度敏感性杂质浓度分布 GE组分分布

Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT被引量：1: 《Chinese Physics B》2014年第11期354-358,共5页付强张万荣金冬月丁春宝赵彦晓鲁东; supported by the National Natural Science Foundation of China(Grant Nos.60776051,61006059,and 61006044);the Beijing Municipal Natural Science Foundation,China(Grant Nos.4142007,4143059,4082007,and 4122014);the Beijing Municipal Education Committee,China(Grant Nos.KM200710005015 and KM200910005001); As is well known, there exists a tradeoff between the breakdown voltage BVcEO and the cut-off frequency fT for a standard heterojunction bipolar transistor （HBT）. In this paper, this tradeoff is alleviated by collec...; 关键词：SiGe heterojunction bipolar transistors （HBTs） breakdown voltage cut-off frequency collectoroptimization

Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect被引量：1: 《Journal of Semiconductors》2012年第5期38-43,共6页Gourab Dutta Sukla Basu; An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration o...; 关键词：GaInP/GaAs HBT current gain transit time recombination current surface recombination ideality factor

Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures被引量：1: 《Journal of Semiconductors》2010年第10期28-31,共4页陈延湖申华军刘新宇徐辉李玲李惠军; The thermal and electro stability of multi-finger heterojunction bipolar transistors （HBTs） with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different l...; 关键词：heterojunction bipolar transistor thermal stability electro stability

改善多指功率SiGe HBTs热稳定性的版图设计(英文): 《功能材料与器件学报》2009年第5期511-515,共5页金冬月张万荣谢红云沈珮胡宁甘军宁李佳; National Natural Science Foundation of China (60776051 and 60376033);Beijing Municipal Natural Science Foun-dation,China (4082007);State 973 project, Beijing Municipal Education Committee,China (KM200710005015);Beijing Municipaltrans -century Talent Project (67002013200301);Young Science Foundation of BJUT (97002013200701);Ph.D Start Science Foundation of BJUT(52002013200701);the 6th Science and Technology Postgraduate Foundation of BJUT(ykj -2007-1970); 提出非均匀指间距结构功率SiGe HBTs的版图设计用以改善热稳定性。模拟和实验结果均表明,与传统的均匀指间距结构相比,非均匀指间距结构HBT的峰值结温和温度分布非均匀性均得到显著改善。上述改善归功于非均匀指间距结构HBT中心指间距...; 关键词：SIGE HBT 热稳定性

3～10GHz SiGe HBTs超宽带低噪声放大器的设计被引量：3: 《电子器件》2009年第2期311-314,共4页李佳张万荣谢红云金冬月沈珮甘军宁; 国家自然科学基金项目资助(60776051;60376033);北京市自然科学基金项目资助(4082007);北京市教委科技发展计划项目资助(KM200710005015);北京市属市管高校中青年骨干教师培养计划项目资助(102(KB)-00856);北京市优秀跨世纪人才基金项目资助(67002013200301);北京工业大学青年科研基金资助(97002013200701);北京工业大学博士科研启动费资助(52002013200701); 根据UWB（Ultra-wideband）无线通信标准,提出了一款超宽带低噪声放大器并进行了设计。该放大器选用高性能的SiGe HBTs,同时采用并联和串联多重反馈的两级结构,以达到超宽频带、高增益、低噪声系数以及良好的输入输出匹配的目的。仿真...; 关键词：射频放大器低噪声放大器电路设计超宽带 SIGE HBTS

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