GaN肖特基紫外探测器的电流输运研究  

Current Transport of GaN Schottky UV Detectors

作　　者：李福宾[1] 林硕[1] 李建功[1] 沈晓明[1] 

机构地区：[1]广西大学物理科学与工程技术学院,广西南宁530004

出　　处：《广西科学》2009年第2期158-160,共3页Guangxi Sciences

基　　金：广西科学基金项目(No.0731012)资助

摘　　要：为了探明GaN肖特基紫外探测器漏电流问题,提高探测器的性能,在已有的各种电流输运模型的基础上,把宽禁带的GaN基半导体材料(Eg>3.4eV)看作绝缘体,用空间电荷限制电流理论(SCLC)分析由金属有机物化学气相沉积法(MOCVD)生长的金属-GaN肖特基紫外探测器样品的I-V和I-V-T曲线。结果表明,SCLC机制控制的电流成分占主导地位,对于两个转换电压V1、V2,在V<V1的区域电流电压遵循欧姆定律,在V1<V<V2的区域遵循幂指数规律I∝Vm,在V>V2的区域电流电压遵循SCLC平方率。The anomalously large leakage current of GaN Schottky UV detectors will impact their performances.In this paper,we analyzed the I-V and I-V-T curves of the M-GaN Sckottky UV detector samples grown by metalorganic chemical vapor deposition（MOCVD）.The space-charge-limited current（SCLC）is considered as the dominating current transport mechanism.Unlike in the case of thermal emission mechanism,the current-voltage relationship follows Ohm＇s law while V〈V1,it follows the power-law while V1〈V〈V2,however,it changes to be the SCLC rule while V〉V2.The reason is analyzed in this paper.

关 键 词：GAN 肖特基 紫外探测器 电流输运 

分 类 号：O47[理学—半导体物理] TL814[理学—物理]