GaN压电效应对载流子浓度的影响  

Influence of Piezoeffect on Carrier Concentration in Gallium Nitride Epilayer

作　　者：张剑平[1] 王晓亮[1] 孙殿照[1] 李晓兵[1] 付荣辉 孔梅影[1] 

机构地区：[1]中国科学院半导体研究所新材料中心

出　　处：《Journal of Semiconductors》1998年第7期498-502,共5页半导体学报（英文版）

摘　　要：在ＮＨ３源ＧＳＭＢＥ生长的ＧａＮ中观察到较大的双轴张应变．随着张应变的增加光致发光谱带边峰展宽，Ｈａｌ测试得到的背景电子浓度增大．本文应用ＧａＮ的压电效应对此进行了解释．Abstract Significant biaxial tensile strain is observed in GaN films grown by Gas Source Molecular Beam Epitaxy using ammonia as nitrogen precusor. The strain broadens the band edge emission peaks in photoluminesce spectra. And the background electron concentration increases with the strain in the film, which is interpreted by a proposal model based on piezoeffect.

关 键 词：半导体 氮化镓 压电效应 载流子浓度 

分 类 号：TN304.23[电子电信—物理电子学]