MOS结构电离辐射效应模型研究  

A model considering the ionizing radiation effects in MOS structure

作　　者：陈伟华[1] 杜磊[1] 庄奕琪[2] 包军林[2] 何亮[1] 张天福[1] 张雪[1] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071 [2]西安电子科技大学微电子学院,西安710071

出　　处：《物理学报》2009年第6期4090-4095,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60276028)资助的课题~~

摘　　要：基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更准确的预测模型.Abstract Based on the physical process of holes trapped in oxide and interface trap buildup induced by proton, a unified physics- based model of oxide-trapped charge and interface trap charge in MOSFET after ionizing radiation exposure as a function of radiation dose is proposed. This model predicts that the oxide-trapped charge density and interface trap charge density induced by radiation rays would be linear in dose at low dose levelss, and would deviate from linear relationship and tend to saturation at moderate to high dose levels. The change of these two kinds of charge induced by ionizing radiation as a function of radiation dose can be well described by the expressions proposed in this model. At last, the correlation between these two kinds of charge is discussed and a linear dependence is suggested at low dose level. This model gives insights into the trap generation in gate oxide induced by radiation, and provides a more accurate predictive model for radiation damage in MOS devices operated in space ionizing radiation environment.

关 键 词：MOS结构 辐射 界面陷阱 氧化层陷阱 

分 类 号：TN386[电子电信—物理电子学]