Halo LDD多晶硅TFT载流子效应研究  

Study on hot carriers effect of Halo LDD Polysilicon Thin Film Transistor

作　　者：吕志娟[1,2] 钟传杰 

机构地区：[1]无锡江南大学,214122 [2]常熟理工学院,常熟215500

出　　处：《微计算机信息》2009年第19期238-239,198,共3页Control & Automation

摘　　要：基于Tsuprem4和Medici模拟软件,研究了HaloLDD多晶硅薄膜晶体管工艺参数对热载流子效应的影响。结果表明,器件的热载流子效应随着Halo区掺杂剂量的增加而变得更加严重;随着掺杂能量的增加,热载流子退化均表现为先增加后减小的变化趋势,在80KeV退化最为严重。The influence of process parameters on hot carriers effect of Halo LDD polysilicon TFT sistor is investigated based on Tsuprem4 and Medici simulation. It is found that hot carriers effect become more serious with increase of doped amount of Halo.As doped energy and in increase,hot carriers degradation increases first and then reduces,and it is most serious in 80KeV.

关 键 词：多晶硅TFT HALO LDD结构 热载流子退化 MEDICI Tsuprem4 

分 类 号：TN321.5[电子电信—物理电子学]