具有136GHz的0.18m GaAs Metamorphic HEMT器件  

High Performance 0.18 μm T-gate GaAs Metamorphic HEMTs with f_t of 136 GHz

作　　者：康耀辉[1] 张政[1] 朱赤[1] 高剑锋[1] 

机构地区：[1]单片集成电路与模块国家级重点实验室,南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2009年第2期167-169,共3页Research & Progress of SSE

摘　　要：应用电子束直写技术成功制作了栅长0.18μm的高性能In0.52Al0.48As/In0.53Ga0.47As MHEMT。从工艺角度,结合器件的小信号等效电路的理论分析,优化了器件结构,特别是T形栅结构,从而减小了器件寄生参数,达到了较好的器件性能。最终制作的In0.52Al0.48As/In0.53Ga0.47As MHEMT饱和电流达到275mA/mm,夹断电压-0.8V,在Vgs为-0.15V时的最大非本征跨导gm为650mS/mm,截止频率ft达到136GHz,最大振荡频率fmax大于120GHz。A 0. 18μm In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors（MHEMT） was fabricated using E-beam lithography. Combining the process and the device small-signal equivalent circuit theory, we optimized the device structure, especially T-gate＇s configuration, decreased device parasitic parameter and obtained perfect performance. Some key performances of this In0.52Al0.48As/In0.53Ga0.47As MHEMT are as follows： typically saturation current density of around 275 mA/mm, threshold voltage of -0.8 V, peak extrinsic transconductance （gm）Of 650 mS/mm at a gate voltage of -0. 15 V, peak ft of 136 GHz and the corresponding fmax of upper than 120 GHz.

关 键 词：渐变组分高迁移率晶体管 T形栅 截止频率 

分 类 号：TN322.6[电子电信—物理电子学]