GaN HFET沟道中的电子状态转移和非线性研究  

Electron State Transformation in Channel and Nonlinearity of GaN HFETs

作　　者：薛舫时[1] 

机构地区：[1]单片集成电路与模块国家级重点实验室,南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2009年第2期170-174,共5页Research & Progress of SSE

摘　　要：从自洽求解薛定谔方程和泊松方程出发研究了大栅压摆动下的沟道电子状态,发现高栅压下电子波函数向势垒层的渗透和激发子带向势垒层的转移是导致跨导下降、线性变差的主要原因。分别研究了势垒层和沟道结构对波函数渗透和电子态转移的影响。通过势垒层和沟道结构的综合设计获得了在大栅压摆动下保持高跨导和线性的优化结构。提出了剪裁二维能带结构的新工艺方案。The electron states in channel of GaN HFETs under large variation of gate voltage are investigated from the self-consistent solution of Schrǒdinger equation and Poisson equation. It is found that the permeation of electron wave functions and the transformation of excited subbands to the barrier are the source of decrease of transconductance and linearity. The influence of barrier and channel structures upon the permeation of electron wave functions and transformation of electron states is researched respectively. An optimized heterostructure for HFETs to keep high transconductance and linearity under large gate voltage variation is derived from the comprehensive design of barrier and channel. A new technology to implement the optimized two-dimensional heterostructure is proposed.

关 键 词：氮化镓 异质结场效应管 非线性 沟道电子态转移 电子波函数渗透 沟道电子布居率 能带剪裁 

分 类 号：TN386[电子电信—物理电子学]