非晶硅和非晶硅锗薄膜的金属诱导结晶  

Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films

作　　者：王光伟[1] 张建民[1] 倪晓昌[1] 李莉[1] 

机构地区：[1]天津工程师范大学电子工程系,天津300222

出　　处：《液晶与显示》2009年第3期356-366,共11页Chinese Journal of Liquid Crystals and Displays

基　　金：天津市高校科技发展基金项目(No.20060605)

摘　　要：分析了金属Ni、Al诱导非晶Si及非晶SiGe薄膜结晶的条件、特点和机理。简要介绍了金属诱导结晶相对于其它一些结晶工艺的优势及其在薄膜晶体管中的应用。概述了影响诱导结晶速率和薄膜微结构的诸多因素,如热处理条件和外加电场等。对电场增强金属诱导横向结晶的相关问题进行了探讨,指出适当强度的电场可显著加快横向诱导结晶的速率,但更强电场则会降低该速率,基于电迁移效应对该现象进行了解释。The conditions, specialties and mechanism of amorphous Si and SiGe films crystallization induced by Ni and Al were analyzed systematically. Advantages of metal-induced crystallization over other crystallizing techniques and its application in thin film transistor fabrication were briefly introduced. And some influencing factors on crystallization velocity as well as the microstructure of the films, such as thermal process conditions and external electric field and etc, were recapitulated. Also, problems existing in electric field-aided metal-induced lateral crystallization were discussed. It was demonstrated that there exists a critical electric field strength, below which, the velocity of metal-induced lateral crystallization increases remarkably with the increase of field strength, while above which the velocity will decrease instead. This phenomenon can be interpreted fairly well in terms of electromigration effect.

关 键 词：金属诱导结晶 金属诱导横向结晶 固相反应 扩散 电场增强横向诱导结晶 成核激活能 晶粒生长 

分 类 号：TN304.055[电子电信—物理电子学] TN304.8